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Effect of Mixed Argon and Nitrogen Ion Beam on Cubic Boron Nitride Film Formation in Ion-Beam-Assisted Deposition
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Cubic boron nitride (c-BN) films have been produced by ion-beam-assisted deposition in which a mixed argon and nitrogen ion beam was irradiated on Si (100) substrates during boron evaporation. Ion species and ion concentrations were measured by mass spectroscopy and optical emission spectroscopy methods. Cubic-BN phase formation was significantly enhanced in a restricted range of Ar+ion concentration of around 30% in the mixed ion beam. At an ion energy range from 0.75 to 1.0 keV, a considerable enhancement was observed with a gas flow ratio of Ar/N2=1/5, which corresponded to a relative Ar+ion concentration of 30%. However, at a gas flow ratio of Ar/N2=1/3, which corresponded to the relative Ar+ion concentration of 50%, no film deposition was observed at 0.75-1.0 keV due to the sputtering effect. It was suggested that the ion bombardment effect on the film crystalline structure is controlled by ion current density, ion mixing ratio and ion energy.
Title: Effect of Mixed Argon and Nitrogen Ion Beam on Cubic Boron Nitride Film Formation in Ion-Beam-Assisted Deposition
Description:
Cubic boron nitride (c-BN) films have been produced by ion-beam-assisted deposition in which a mixed argon and nitrogen ion beam was irradiated on Si (100) substrates during boron evaporation.
Ion species and ion concentrations were measured by mass spectroscopy and optical emission spectroscopy methods.
Cubic-BN phase formation was significantly enhanced in a restricted range of Ar+ion concentration of around 30% in the mixed ion beam.
At an ion energy range from 0.
75 to 1.
0 keV, a considerable enhancement was observed with a gas flow ratio of Ar/N2=1/5, which corresponded to a relative Ar+ion concentration of 30%.
However, at a gas flow ratio of Ar/N2=1/3, which corresponded to the relative Ar+ion concentration of 50%, no film deposition was observed at 0.
75-1.
0 keV due to the sputtering effect.
It was suggested that the ion bombardment effect on the film crystalline structure is controlled by ion current density, ion mixing ratio and ion energy.
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