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FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD
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We have investigated the field limiting ring (FLR) geometry dependence of breakdown
voltage characteristics for a junction barrier Schottky (JBS)-assisted FLR SiC-SBD. The SiC-SBDs
having a guard ring-assisted FLR surrounding a Schottky contact edge and an internal ring inside
Schottky contact were fabricated. The breakdown voltage characteristics of the JBS-assisted FLR
SiC-SBD are significantly dependent on the width, spacing, and number of FLR. The breakdown
voltage characteristic is improved as either the FLR width and FLR number increase or the FLR
spacing decreases. Approximately 1650 V maximal breakdown voltage, corresponding to 82% ideal
breakdown voltage, is observed with seven FLRs having 5 2m width and 1 2m spacing.
Trans Tech Publications, Ltd.
Title: FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD
Description:
We have investigated the field limiting ring (FLR) geometry dependence of breakdown
voltage characteristics for a junction barrier Schottky (JBS)-assisted FLR SiC-SBD.
The SiC-SBDs
having a guard ring-assisted FLR surrounding a Schottky contact edge and an internal ring inside
Schottky contact were fabricated.
The breakdown voltage characteristics of the JBS-assisted FLR
SiC-SBD are significantly dependent on the width, spacing, and number of FLR.
The breakdown
voltage characteristic is improved as either the FLR width and FLR number increase or the FLR
spacing decreases.
Approximately 1650 V maximal breakdown voltage, corresponding to 82% ideal
breakdown voltage, is observed with seven FLRs having 5 2m width and 1 2m spacing.
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