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Simulation of the Effect of Emitter Doping on the Delay Time in AlGaAs/GaAs Heterojunction Bipolar Transistors
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The influence of the emitter doping level (5×1017-5×1018 cm-3) on the delay time in AlGaAs/GaAs heterojunction bipolar transistors is investigated using numerical simulation based on a drift-diffusion model. The results reveal that the emitter delay time (τE) decreases with higher emitter doping (5×1018 cm-3), allowing a very short delay time (<0.2 ps). It is shown that τE is affected by excess charge accumulation due to the built-in electric field at the cap/emitter (n+-GaAs/n-AlGaAs) isotype heterojunction, more than at the emitter/base (n-AlGaAs/p+-GaAs) heterojunction, under high-current operation (>104 A/cm2).
Title: Simulation of the Effect of Emitter Doping on the Delay Time in AlGaAs/GaAs Heterojunction Bipolar Transistors
Description:
The influence of the emitter doping level (5×1017-5×1018 cm-3) on the delay time in AlGaAs/GaAs heterojunction bipolar transistors is investigated using numerical simulation based on a drift-diffusion model.
The results reveal that the emitter delay time (τE) decreases with higher emitter doping (5×1018 cm-3), allowing a very short delay time (<0.
2 ps).
It is shown that τE is affected by excess charge accumulation due to the built-in electric field at the cap/emitter (n+-GaAs/n-AlGaAs) isotype heterojunction, more than at the emitter/base (n-AlGaAs/p+-GaAs) heterojunction, under high-current operation (>104 A/cm2).
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