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Control of Carbon Incorporation in Selectively Grown Epitaxial SiGe:C Layers Dedicated to HBTs
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The fabrication of high speed npn SiGe HBTs requires the use of carbon to inhibit boron diffusion. The incorporation of carbon in SiGe films must be accurately controlled to avoid the formation of C-related defects. This paper describes a method which allows the development of SiGe:C processes for high performance HBTs based on photoluminescence analysis.
The Electrochemical Society
Title: Control of Carbon Incorporation in Selectively Grown Epitaxial SiGe:C Layers Dedicated to HBTs
Description:
The fabrication of high speed npn SiGe HBTs requires the use of carbon to inhibit boron diffusion.
The incorporation of carbon in SiGe films must be accurately controlled to avoid the formation of C-related defects.
This paper describes a method which allows the development of SiGe:C processes for high performance HBTs based on photoluminescence analysis.
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