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Photoluminescence of Selectively Grown Epitaxial SiGe:C/Si layers
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Photoluminescence of strained Si1-x-yGexCy alloy layer and Si1-x-yGexCy /Si1-xGex structures selectively grown by RT-CVD is investigated. Spectroscopic PL at low temperature (14K) and integrated PL at room temperature were performed. We report the effect of C atoms on SiGe photoluminescence spectra features, especially intensity ratio between the no-phonon (NP) and transverse-optical (TO) transitions. Using dedicated Si1-x-yGexCy /Si1-xGex structures, influence on SiGe PL spectra of C atoms supposed in non-substitutional positions is reported.
The Electrochemical Society
Title: Photoluminescence of Selectively Grown Epitaxial SiGe:C/Si layers
Description:
Photoluminescence of strained Si1-x-yGexCy alloy layer and Si1-x-yGexCy /Si1-xGex structures selectively grown by RT-CVD is investigated.
Spectroscopic PL at low temperature (14K) and integrated PL at room temperature were performed.
We report the effect of C atoms on SiGe photoluminescence spectra features, especially intensity ratio between the no-phonon (NP) and transverse-optical (TO) transitions.
Using dedicated Si1-x-yGexCy /Si1-xGex structures, influence on SiGe PL spectra of C atoms supposed in non-substitutional positions is reported.
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