Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Interview with Ge Gan-ru
View through CrossRef
This interview is with the person rightlycalled China’s fi rst “avant-garde” composer,Ge Gan-ru. The honor is due to his 1983 compositionfor solo cello, Yi Feng (Lost Style), whichgrew out of his in-depth analysis of how Westernand Chinese music differ in their core presumptionsabout pitch, rhythm, timbre, and dynamics.A summary of that analysis is an important featureof this interview. Among other works discussedare his Wrong, Wrong, Wrong! for Voice,self-accompanied by a Toy Orchestra (2006), andhis Fifth String Quartet (2007), titled Fall of Baghdad.Interview with Ge Gan-ru for ICONI, conductedby Dr. Edward Green.
Title: Interview with Ge Gan-ru
Description:
This interview is with the person rightlycalled China’s fi rst “avant-garde” composer,Ge Gan-ru.
The honor is due to his 1983 compositionfor solo cello, Yi Feng (Lost Style), whichgrew out of his in-depth analysis of how Westernand Chinese music differ in their core presumptionsabout pitch, rhythm, timbre, and dynamics.
A summary of that analysis is an important featureof this interview.
Among other works discussedare his Wrong, Wrong, Wrong! for Voice,self-accompanied by a Toy Orchestra (2006), andhis Fifth String Quartet (2007), titled Fall of Baghdad.
Interview with Ge Gan-ru for ICONI, conductedby Dr.
Edward Green.
Related Results
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Gallium nitride (GaN) has great potential applications in high-power and high-frequency electrical devices due to its superior physical properties.High dislocation density of GaN g...
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Systematic studies were performed on the influence of different cap layers of i-GaN, n-GaN, p-GaN and InGaN on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on sapphi...
Novel approaches for robust polaritonics
Novel approaches for robust polaritonics
The possibility of having low-threshold, inversion-less lasers, makinguse of the macroscopic occupation, of the low density of states, at thebottom of the lower polariton branch, h...
(Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN
(Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN
GaN and related compounds have received a great deal of attention from the research community due to their tunable direct bandgap, radiation hardness, and a favorable Baliga figure...
GaN Growth Using GaN Buffer Layer
GaN Growth Using GaN Buffer Layer
High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate. An optically flat and smooth surface was obtained over a t...
MSG-Point-GAN: Multi-Scale Gradient Point GAN for Point Cloud Generation
MSG-Point-GAN: Multi-Scale Gradient Point GAN for Point Cloud Generation
The generative adversarial network (GAN) has recently emerged as a promising generative model. Its application in the image field has been extensive, but there has been little rese...
Advanced AlGaN/GaN HEMT technology, design, fabrication and characterization
Advanced AlGaN/GaN HEMT technology, design, fabrication and characterization
Nowadays, the microelectronics technology is based on the mature and very well established silicon (Si) technology. However, Si exhibits some important limitations regarding its vo...
Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs
Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs
We prepared AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap thicknesses of 0, 1, 3, and 5 nm and compared the material characteristics and device performances. It...