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Poly-SiGe films prepared by metal-induced growth using UHVCVD system
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Poly-SiGe films were prepared by a metal-induced growth technique with ultrahigh vacuum chemical vapor deposition(UHVCVD) at low temperature. The crystal quality and morphology of poly-SiGe films were characterized by XRD and SEM. The influences of varying the thickness of Ni prelayer and the growth parameters on poly-SiGe films were investigated. It is shown that thicker Ni(≥10nm) has an obvious effect on poly-SiGe growth at 420—500℃. And for the samples with 60nm thick Ni layers, poly-SiGe deposition yields a continuous, highly crystalline film with good morphology.
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Title: Poly-SiGe films prepared by metal-induced growth using UHVCVD system
Description:
Poly-SiGe films were prepared by a metal-induced growth technique with ultrahigh vacuum chemical vapor deposition(UHVCVD) at low temperature.
The crystal quality and morphology of poly-SiGe films were characterized by XRD and SEM.
The influences of varying the thickness of Ni prelayer and the growth parameters on poly-SiGe films were investigated.
It is shown that thicker Ni(≥10nm) has an obvious effect on poly-SiGe growth at 420—500℃.
And for the samples with 60nm thick Ni layers, poly-SiGe deposition yields a continuous, highly crystalline film with good morphology.
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