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Growth of Nitrogen-Doped ZnSe by Photoassisted Metalorganic Chemical Vapor Deposition
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Growth of nitrogen-doped ZnSe using dimethylzinc and dimethylselenide in the growth temperature range of 330 to 390° C by photoassisted metalorganic chemical vapor deposition (MOCVD) employing an ultrahigh-pressure Hg lamp was investigated. t-Butylamine was used as a nitrogen dopant source. A nitrogen concentration of more than 1018 cm-3 was obtained. The samples showed p-type conduction, and a maximum hole concentration of 3.0×1018 cm-3 was achieved by MOCVD.
Title: Growth of Nitrogen-Doped ZnSe by Photoassisted Metalorganic Chemical Vapor Deposition
Description:
Growth of nitrogen-doped ZnSe using dimethylzinc and dimethylselenide in the growth temperature range of 330 to 390° C by photoassisted metalorganic chemical vapor deposition (MOCVD) employing an ultrahigh-pressure Hg lamp was investigated.
t-Butylamine was used as a nitrogen dopant source.
A nitrogen concentration of more than 1018 cm-3 was obtained.
The samples showed p-type conduction, and a maximum hole concentration of 3.
0×1018 cm-3 was achieved by MOCVD.
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