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Photoluminescence Spectra of Nitrogen-Doped ZnSe by Photoassisted Metal-Organic Chemical Vapor Deposition
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Photoluminescence spectra of nitrogen-doped ZnSe grown by photoassisted metal-organic chemical vapor deposition (MOCVD) at temperatures of 330 and 350° C and with nitrogen concentration ranging from 2.0×1017 cm-3 to 3.0×1018 cm-3 were measured. The spectra of lightly doped samples showed a donor-to-acceptor (D-A) pair emission line at 2.696 eV with LO phonon replicas. The spectra for heavily doped samples were dominated by a broad-band D-A pair emission at longer wavelengths. The comparison of photoluminescence spectra of nitrogen-doped ZnSe grown by MOCVD and molecular beam epitaxy (MBE) is discussed.
Title: Photoluminescence Spectra of Nitrogen-Doped ZnSe by Photoassisted Metal-Organic Chemical Vapor Deposition
Description:
Photoluminescence spectra of nitrogen-doped ZnSe grown by photoassisted metal-organic chemical vapor deposition (MOCVD) at temperatures of 330 and 350° C and with nitrogen concentration ranging from 2.
0×1017 cm-3 to 3.
0×1018 cm-3 were measured.
The spectra of lightly doped samples showed a donor-to-acceptor (D-A) pair emission line at 2.
696 eV with LO phonon replicas.
The spectra for heavily doped samples were dominated by a broad-band D-A pair emission at longer wavelengths.
The comparison of photoluminescence spectra of nitrogen-doped ZnSe grown by MOCVD and molecular beam epitaxy (MBE) is discussed.
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