Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Fang–Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures*
View through CrossRef
To study the electron transport properties in InGaN channel-based heterostructures, a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier. Various scattering mechanisms, such as dislocation impurity (DIS) scattering, polar optical phonon (POP) scattering, piezoelectric field (PE) scattering, interface roughness (IFR) scattering, deformation potential (DP) scattering, alloy disorder (ADO) scattering from InGaN channel layer, and temperature-dependent energy bandgaps are considered in the calculation model. A contrast of AlInGaN/AlN/InGaN/GaN double heterostructure (DH) to the theoretical AlInGaN/AlN/InGaN single heterostructure (SH) is made and analyzed with a full range of barrier alloy composition. The effect of channel alloy composition on InGaN channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.04 for higher mobility in DH with Al0.4In0.07Ga0.53N barrier. Finally, the temperature-dependent two-dimensional electron gas (2DEG) density and mobility in InGaN channel-based DH with Al0.83In0.13Ga0.04N and Al0.4In0.07Ga0.53N barrier are investigated. Our results are expected to conduce to the practical application of InGaN channel-based heterostructures.
Title: Fang–Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures*
Description:
To study the electron transport properties in InGaN channel-based heterostructures, a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier.
Various scattering mechanisms, such as dislocation impurity (DIS) scattering, polar optical phonon (POP) scattering, piezoelectric field (PE) scattering, interface roughness (IFR) scattering, deformation potential (DP) scattering, alloy disorder (ADO) scattering from InGaN channel layer, and temperature-dependent energy bandgaps are considered in the calculation model.
A contrast of AlInGaN/AlN/InGaN/GaN double heterostructure (DH) to the theoretical AlInGaN/AlN/InGaN single heterostructure (SH) is made and analyzed with a full range of barrier alloy composition.
The effect of channel alloy composition on InGaN channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.
04 for higher mobility in DH with Al0.
4In0.
07Ga0.
53N barrier.
Finally, the temperature-dependent two-dimensional electron gas (2DEG) density and mobility in InGaN channel-based DH with Al0.
83In0.
13Ga0.
04N and Al0.
4In0.
07Ga0.
53N barrier are investigated.
Our results are expected to conduce to the practical application of InGaN channel-based heterostructures.
Related Results
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Gallium nitride (GaN) has great potential applications in high-power and high-frequency electrical devices due to its superior physical properties.High dislocation density of GaN g...
GaN/AlGaN nanowires for quantum devices
GaN/AlGaN nanowires for quantum devices
Nanofils de GaN/AlGaN pour les composants quantiques
Ce travail se concentre sur l'ingénierie Intersubband (ISB) des nanofils où nous avons conçu des hétérostructur...
Croissance et caractérisation de nanofils de GaN et d'hétérostructures filaires de GaN/AIN
Croissance et caractérisation de nanofils de GaN et d'hétérostructures filaires de GaN/AIN
Ce travail de thèse porte sur la croissance par épitaxie par jets moléculaires assistée plasma et sur la caractérisation de nanofils (NF) de GaN et d'hétérostructures filaires de G...
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Systematic studies were performed on the influence of different cap layers of i-GaN, n-GaN, p-GaN and InGaN on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on sapphi...
Elaboration et propriétés de nanofils à base d'InGaN pour la réalisation de micro et nanoLEDs
Elaboration et propriétés de nanofils à base d'InGaN pour la réalisation de micro et nanoLEDs
Les semiconducteurs III-N, incluant le GaN, l’AlN, l’InN et leurs alliages, font l’objet d’un intérêt grandissant pour le développement de dispositifs optoélectroniques. Leur gap d...
Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
The insertion of an InGaN underlayer (UL) is known to strongly improve the performance of InGaN/GaN quantum well (QW) based blue light emitting diodes (LEDs). However, the actual p...
UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells
UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells
AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) gr...
High-temperature production of AlN in Mg alloys with ammonia gas
High-temperature production of AlN in Mg alloys with ammonia gas
Abstract
The objective of this study was to produce composites with a uniform distribution of aluminum nitride (AlN) reinforcing particles in...