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UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells
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AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.
Springer Science and Business Media LLC
Title: UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells
Description:
AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD).
The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density.
The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states.
The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder.
The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN.
This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.
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