Initialization-free multistate memristor: Synergy of spin–orbit torque and magnetic fields

Spin–orbit torque (SOT)-based perpendicularly magnetized memory devices with multistate memory have garnered significant interest due to their applicability in low-power in-memory analog computing. However, current methods are hindered by initialization problems, such as prolonged writing duration, and limitations, on the number of magnetic states. Consequently, a universal method for achieving multistate in perpendicular magnetic anisotropy (PMA)-based stacks remains elusive. Here, we propose a general experimental method for achieving multistate without any initialization step in SOT-driven magnetization switching by integrating an external out-of-plane magnetic field. Motivated by macrospin calculations coupled with micromagnetic simulations, which demonstrate the plausibility of magnetization state changes due to out-of-plane field integration, we experimentally verify multistate behavior in Pt/Co/Pt and W/Pt/Co/AlOx stacks. The occurrence of multistate behavior is attributed to intermediate domain states with Néel domain walls. We achieve repeatable 18 multistate configurations with a minimal reduction in retentivity through energy barrier measurements, paving the way for efficient analog computing.