Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Characterization of Gaas/Si/GaAs Heterointerfaces
View through CrossRef
ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.
Springer Science and Business Media LLC
Title: Characterization of Gaas/Si/GaAs Heterointerfaces
Description:
ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper.
Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates.
It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation).
Higher defect density is observed for GaAs grown on Si substrate.
This higher defect density correlates with an increased device speed, but with reduced sensitivity.
Related Results
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface morphologies of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy were studied using atomic force microscopy. The surface of a GaAs layer gr...
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
Sublattice reversal epitaxy is demonstrated in lattice-matched
GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed
by reflection high energy elec...
Analysis of the relation between spectral response and absorptivity of GaAs photocathode
Analysis of the relation between spectral response and absorptivity of GaAs photocathode
In order to study the relation between spectral response and absorptivity of GaAs photocathode, two kinds of GaAs photocathodes are prepared by molecular beam epitaxy (MBE) and met...
Increase of Critical Thickness and Optical Emission Range in (InAs)1(GaAs)n Strained Short-Period Superlattices
Increase of Critical Thickness and Optical Emission Range in (InAs)1(GaAs)n Strained Short-Period Superlattices
The critical thickness and optical emission wavelength range of (InAs)1(GaAs)
n
strained sho...
Growth and Characterization of GaAs/GaSe/Si Heterostructures
Growth and Characterization of GaAs/GaSe/Si Heterostructures
We have grown and characterized epitaxial GaAs grown on layered structure GaSe on As-passivated Si(111) for the purpose of using layered structure GaSe as a lattice mismatch/therma...
Temperature-Programmed Scattering (TPS) Study on Reactivity Difference of GaAs and GaAs Oxide Surfaces
Temperature-Programmed Scattering (TPS) Study on Reactivity Difference of GaAs and GaAs Oxide Surfaces
The reactivity of GaAs and GaAs oxide surfaces to trimethylgallium (TMG) was studied by temperature-programmed scattering (TPS) through the energy accommodation coefficient (EAC). ...
Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy
Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy
Improvements in the initial stage of GaAs growth on the epitaxial silicon surface without high-temperature Si surface treatment and in the GaAs-Si interface have been observed for ...
Diffusion of Gallium Vacancies from Low-Temperature-Grown GaAs
Diffusion of Gallium Vacancies from Low-Temperature-Grown GaAs
Diffusion of crystalline defects from low-temperature-grown GaAs (LT-GaAs) during annealing at 600°C has been studied. Gallium vacancies diffuse from the LT-GaAs layer into an adja...