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The Nd-nanocluster Coupling Strength and its Effect in Excitation/de-excitation of Nd3+Luminescence in Nd-doped Silicon-rich Silicon Oxide
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AbstractThe Nd-nanocluster Si (nc-Si) coupling strength and its effect in excitation/de-excitation of Nd3+luminescence in Nd-doped silicon-rich silicon oxide (SRSO) is investigated. Nd-doped SRSO thin films, which consist of nc-Si embedded inside a SiO2matrix, were prepared by electron-cyclotron-resonance plasma enhanced chemical vapor deposition (ECR-PECVD) of SiH4and O2with co-sputtering of Nd and subsequent anneal at 950 °C. Efficient Nd3+luminescence with moderate temperature quenching is observed. Based on the temperature dependence of Nd3+luminescence lifetime, a coupling strength between nc-Si and Nd that is strong enough to result in efficient excitation of Nd3+via quantum confined excitons while weak enough to result in a small back-transfer rate is identified as the key to Nd3+luminescence.
Title: The Nd-nanocluster Coupling Strength and its Effect in Excitation/de-excitation of Nd3+Luminescence in Nd-doped Silicon-rich Silicon Oxide
Description:
AbstractThe Nd-nanocluster Si (nc-Si) coupling strength and its effect in excitation/de-excitation of Nd3+luminescence in Nd-doped silicon-rich silicon oxide (SRSO) is investigated.
Nd-doped SRSO thin films, which consist of nc-Si embedded inside a SiO2matrix, were prepared by electron-cyclotron-resonance plasma enhanced chemical vapor deposition (ECR-PECVD) of SiH4and O2with co-sputtering of Nd and subsequent anneal at 950 °C.
Efficient Nd3+luminescence with moderate temperature quenching is observed.
Based on the temperature dependence of Nd3+luminescence lifetime, a coupling strength between nc-Si and Nd that is strong enough to result in efficient excitation of Nd3+via quantum confined excitons while weak enough to result in a small back-transfer rate is identified as the key to Nd3+luminescence.
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