Intrinsic layer-enhanced InGaP/GaAs solar cell: A path to higher efficiency

Technology computer-aided design simulations are revolutionizing the development of semiconductor devices, including solar cells, allowing researchers to understand device design physics, and thus, improving the device design for potential applications. We assessed the performance of simulated InGaP/GaAs solar cells, with and without intrinsic layers in the bottom cells. We employed two different intrinsic layers, separately, in the bottom cells of our two simulated InGaP/GaAs solar cells. One of our simulated InGaP/GaAs solar cells employs InP 1.6 μm intrinsic layer in the bottom GaAs cell. For this solar cell, we found open circuit voltage (VOC), short circuit current density (JSC), maximum power density (Pm), efficiency (η), and fill factor (FF) to be 2.37 V, 18.2 mA/cm2, 36.7 mW/cm2, 26.6%, and 84.7%, respectively. Another simulated InGaP/GaAs solar cell employs an InAlGaP intrinsic layer in the bottom GaAs cell for which JSC = 20.9, VOC = 2.41 V, Pm = 41.3 mW/cm2, FF = 81.7%, and η = 29.93%. These results bring us closer to understanding and creating efficient III–V solar cells for harnessing solar energy.