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Superlattice-like electrode for low-power phase-change random access memory
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Superlattice-like top electrode formed alternately by TiN and W was embedded into phase-change random access memory (PCRAM) with the aim of reducing the power. Ga2Sb4Te3 film is employed as phase change layer. The minimum reset voltage of PCRAM based on superlattice-like electrode was significantly lower than that of one based on the conventional electrode. The set operation can be completed by an electric pulse as short as 5 ns. The superlattice-like-electrode-based PCRAM can be normally operated at 120 °C with endurance up to 1 × 106 cycles. The low thermal conductivity of superlattice-like electrode is responsible for the performance improvement of PCRAM.
Title: Superlattice-like electrode for low-power phase-change random access memory
Description:
Superlattice-like top electrode formed alternately by TiN and W was embedded into phase-change random access memory (PCRAM) with the aim of reducing the power.
Ga2Sb4Te3 film is employed as phase change layer.
The minimum reset voltage of PCRAM based on superlattice-like electrode was significantly lower than that of one based on the conventional electrode.
The set operation can be completed by an electric pulse as short as 5 ns.
The superlattice-like-electrode-based PCRAM can be normally operated at 120 °C with endurance up to 1 × 106 cycles.
The low thermal conductivity of superlattice-like electrode is responsible for the performance improvement of PCRAM.
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