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Excimer-Laser Annealing Technology for Hydrogenated Amorphous-Silicon Devices
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Dehydrogenation characteristics have been investigated in detail for excimer-laser annealing of hydrogenated amorphous silicon (a-Si:H) films. Only the XeF excimer-laser light has a negligibly small photonic-dissociation rate of the Si-H bonds, and thus hydrogen atoms remain in the annealed film, resulting in highly conductive poly-Si film. The XeF excimer-laser annealing has been confirmed to be useful for fabricating high-performance a-Si:H thin-film transistors.
Title: Excimer-Laser Annealing Technology for Hydrogenated Amorphous-Silicon Devices
Description:
Dehydrogenation characteristics have been investigated in detail for excimer-laser annealing of hydrogenated amorphous silicon (a-Si:H) films.
Only the XeF excimer-laser light has a negligibly small photonic-dissociation rate of the Si-H bonds, and thus hydrogen atoms remain in the annealed film, resulting in highly conductive poly-Si film.
The XeF excimer-laser annealing has been confirmed to be useful for fabricating high-performance a-Si:H thin-film transistors.
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