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Study on high temperature model based on the n-Channel planar 4H-SiC MOSFET
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Purpose
To use the 4H-SiC material in integrated circuits for high temperature application, an accurate and simple circuit model of n-channel planar 4H-SiC MOSFET is required.
Design/methodology/approach
In this paper, a SPICE model of n-channel planar 4H-SiC MOSFET was built based on the device simulation results and measurement results. Firstly, a device model was simulated with Sentaurus TCAD, with measured parameters from fabricated planar 4H-SiC MOSFET previously. Then the device simulation results were analyzed and parameters for SPICE models were extracted. With these parameters, an accurate SPICE model was built and simulated.
Findings
The SPICE model exhibits the same performance as the measured results with different environment temperatures. The simulation results indicate that the maximum fitting error is 0.22 mA (7.33% approximately) at 200 °C. A common-source amplifier with this model is also simulated and the simulated gain is stable at different environment temperatures.
Originality/value
This paper provides a reliable modeling method for n-Channel Planar 4H-SiC MOSFET and reference value for the design of 4H-SiC high temperature integrated circuit.
Title: Study on high temperature model based on the n-Channel planar 4H-SiC MOSFET
Description:
Purpose
To use the 4H-SiC material in integrated circuits for high temperature application, an accurate and simple circuit model of n-channel planar 4H-SiC MOSFET is required.
Design/methodology/approach
In this paper, a SPICE model of n-channel planar 4H-SiC MOSFET was built based on the device simulation results and measurement results.
Firstly, a device model was simulated with Sentaurus TCAD, with measured parameters from fabricated planar 4H-SiC MOSFET previously.
Then the device simulation results were analyzed and parameters for SPICE models were extracted.
With these parameters, an accurate SPICE model was built and simulated.
Findings
The SPICE model exhibits the same performance as the measured results with different environment temperatures.
The simulation results indicate that the maximum fitting error is 0.
22 mA (7.
33% approximately) at 200 °C.
A common-source amplifier with this model is also simulated and the simulated gain is stable at different environment temperatures.
Originality/value
This paper provides a reliable modeling method for n-Channel Planar 4H-SiC MOSFET and reference value for the design of 4H-SiC high temperature integrated circuit.
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