Study And Investigation of Silicon Extended Source Vertical Double Gate Tunnel Transistor For Analog/RF Performance

Abstract In this paper, a Silicon Double Gate tunnel field effect transistor with Extended Source (ESVDG-TFET) is disclosed while addressing the need for dc/switching and analog/RF applications using Silvaco-Atlas simulator which is used to examine and explore the performance of the proposed device. The mechanics of band-to-band tunnelling and accompanying carrier injection are used to illustrate the operation of the proposed silicon ESVDG-TFET device. The gate is designed to overlap with extended source region along with N+ pockets and channel in order to facilitate both the lateral and vertical tunnelling . The silicon ESVDG-TFET provide lower subthreshold swing of 10.1 mV/decade that allow higher ratio of ION / IOFF of 1013 for optimized device structural parameters with threshold voltage of 0.35 V. Moreover, peak transconductance of 800 uS/ um, cutoff frequency of 82 GHz, gain bandwidth product of 16.8 GHz and transit time of 1p sec is obtained by proposed device.