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Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI2 Fornation
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AbstractDeep level transient spectroscopy (DLTS) in conjunction with other analytical techniques was used to establish a correlation between the leakage current in the TiSi2/p+/n-Si shallow diodes (0.25 micron) and the Ti-related Ec - 0.23 eV deep trap. It was found that Ti diffused into the junction region durin the TiSi2 formation and caused leakage currents with values up to 2 × 10−8 A/cm2. Further increases of the leakage current were related to the formation of a TiSi2/n-Si Schottky barrier.
Springer Science and Business Media LLC
Title: Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI2 Fornation
Description:
AbstractDeep level transient spectroscopy (DLTS) in conjunction with other analytical techniques was used to establish a correlation between the leakage current in the TiSi2/p+/n-Si shallow diodes (0.
25 micron) and the Ti-related Ec - 0.
23 eV deep trap.
It was found that Ti diffused into the junction region durin the TiSi2 formation and caused leakage currents with values up to 2 × 10−8 A/cm2.
Further increases of the leakage current were related to the formation of a TiSi2/n-Si Schottky barrier.
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