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Density Variations in Molten Silicon Dependent on Its Thermal History
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Time-dependent density variations in molten silicon held at 1452° C for about 6 h depended on
the thermal process prior to holding. A slow decrease was observed after melting and heating, but a slow increase
followed cooling. Melt density reached the same stable value of 2.556 g/cm3 after both variations.
Reflecting this variation, the density of the melt measured during heating was slightly higher than that measured
during cooling. The effect of the crucible material on melt density was also studied. With an SiO2 crucible,
oxygen impurities of about 1018 atoms/cm3 were detected in the resolidified melt. The temperature
dependence of the melt density was basically the same as for a SiC-coated graphite crucible, but the anomalous
increase in melt density for temperatures near the melting point seemed to be slightly steeper.
Title: Density Variations in Molten Silicon Dependent on Its Thermal History
Description:
Time-dependent density variations in molten silicon held at 1452° C for about 6 h depended on
the thermal process prior to holding.
A slow decrease was observed after melting and heating, but a slow increase
followed cooling.
Melt density reached the same stable value of 2.
556 g/cm3 after both variations.
Reflecting this variation, the density of the melt measured during heating was slightly higher than that measured
during cooling.
The effect of the crucible material on melt density was also studied.
With an SiO2 crucible,
oxygen impurities of about 1018 atoms/cm3 were detected in the resolidified melt.
The temperature
dependence of the melt density was basically the same as for a SiC-coated graphite crucible, but the anomalous
increase in melt density for temperatures near the melting point seemed to be slightly steeper.
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