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Thermal stress hardening of a-Si3N4/nc-TiN nanostructured multilayers
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Amorphous/nanopolycrystalline Si3N4/TiN nanostructured multilayer films have been fabricated by radio-frequency reactive magnetron sputtering. The effects of deposition temperature, modulation period, and the layer thickness ratio on the hardness have been studied, in order to elucidate the hardening mechanisms in these multilayers. The hardness of the Si3N4/TiN multilayers is affected not only by the modulation periods, but also by the layer thickness ratio and deposition temperature. The hardness value is about 40% higher than the value calculated from the rule of mixtures at a deposition temperature of 500 °C and a modulation ratio (lSi3N4/lTiN) of 3/1. Based on the experimental results, it is suggested that the alternating stress field caused by thermal mismatch between Si3N4 and TiN is one of the main reasons for the superhardness effect in Si3N4/TiN nanostructured multilayers.
Title: Thermal stress hardening of a-Si3N4/nc-TiN nanostructured multilayers
Description:
Amorphous/nanopolycrystalline Si3N4/TiN nanostructured multilayer films have been fabricated by radio-frequency reactive magnetron sputtering.
The effects of deposition temperature, modulation period, and the layer thickness ratio on the hardness have been studied, in order to elucidate the hardening mechanisms in these multilayers.
The hardness of the Si3N4/TiN multilayers is affected not only by the modulation periods, but also by the layer thickness ratio and deposition temperature.
The hardness value is about 40% higher than the value calculated from the rule of mixtures at a deposition temperature of 500 °C and a modulation ratio (lSi3N4/lTiN) of 3/1.
Based on the experimental results, it is suggested that the alternating stress field caused by thermal mismatch between Si3N4 and TiN is one of the main reasons for the superhardness effect in Si3N4/TiN nanostructured multilayers.
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