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Sub-Quarter Micron Logic-Gate-Pattern Fabrication Using Halftone Phase-Shifting Masks
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A new technique for enhancing the resolution of isolated line patterns is proposed. It is based on the balance in the intensity and the phase between the 0th-order rays and the rays diffracted from a line pattern. We deduce this technique from a condition of a high-contrast image by using the complex amplitude. We show that this technique can be achieved with an optimized halftone phase-shifting mask and optimized off-axis illumination. The optimum transmittance of the mask is 30% for a 0.4-λ/ NA line pattern and the optimum illumination for isolated lines in the x and y direction is quadrupole-shaped illumination whose centers are (±0.4, ±0.4). We tested this method in KrF lithography with an 8% halftone phase-shifting mask and found that a complex 0.20-µ m gate pattern can be fabricated with a large depth of focus of 1.2 µ m.
Title: Sub-Quarter Micron Logic-Gate-Pattern Fabrication Using Halftone Phase-Shifting Masks
Description:
A new technique for enhancing the resolution of isolated line patterns is proposed.
It is based on the balance in the intensity and the phase between the 0th-order rays and the rays diffracted from a line pattern.
We deduce this technique from a condition of a high-contrast image by using the complex amplitude.
We show that this technique can be achieved with an optimized halftone phase-shifting mask and optimized off-axis illumination.
The optimum transmittance of the mask is 30% for a 0.
4-λ/ NA line pattern and the optimum illumination for isolated lines in the x and y direction is quadrupole-shaped illumination whose centers are (±0.
4, ±0.
4).
We tested this method in KrF lithography with an 8% halftone phase-shifting mask and found that a complex 0.
20-µ m gate pattern can be fabricated with a large depth of focus of 1.
2 µ m.
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