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Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning
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It is clarified that a new type of singularity is formed on Si wafer surface by the Standard Cleaning 1 (SC1) of the RCA cleaning process. Such singularities are perceived by laser particle counters as small particles on wafers. It is shown that the singularities correspond to small shallow pits caused by the etching effect of the SC1 cleaning solution. The origin of the pits is presumed to be some kind of defect in the melt-grown crystals.
Title: Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning
Description:
It is clarified that a new type of singularity is formed on Si wafer surface by the Standard Cleaning 1 (SC1) of the RCA cleaning process.
Such singularities are perceived by laser particle counters as small particles on wafers.
It is shown that the singularities correspond to small shallow pits caused by the etching effect of the SC1 cleaning solution.
The origin of the pits is presumed to be some kind of defect in the melt-grown crystals.
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