A New Analytical Technique for Evaluating Standing Wave Effect of Chemically Amplified Positive Resist

A new analyticai system for evaluating the standing wave effect in chemically amplified positive resist has been developed. In this paper, we describe a new system for calculating the linewidth variation due to the standing wave effect and compare simulation and experimental results. The linewidth for different resist thicknesses is calculated by changing the exposure energy at constant resist thickness. The exposure energy is determined using two series of the experimental dissolution rate data. The development effect for the different resist thicknesses is simulated by modifying the dissolution rate in the direction of resist depth. To verify this system, a two-component chemicaily amplified positive resist was used. The exposure was performed with a KrF excimer laser stepper. The results show that the newly designed system is able to rapidly evaluate the standing wave effect of resist. The system is an effective tool for optimizing resist materials and lithographic process conditions.