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Preferentially (105)-Oriented SrBi2Ta2O9 Films Prepared by Laser Ablation Method
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SrBi2Ta2O9 thin films are prepared on both Pt sheet and Si wafer by the laser ablation method using an ArF excimer laser below 500°C. Crystallographic properties of the film are characterized with substrate temperature (T
s) and O2 gas pressure as parameters. SrBi2Ta2O9 thin films are oriented preferentially to (105) on both Pt sheet and Si wafer. X-ray photoelectron spectra (XPS) depth profile reveals a homogeneous composition and XPS signals of Bi suggest oxygen deficiency of the film on the Si wafer. The films deposited on Pt and Si consist of spherical grains of about 250 and 200 nm diameter, respectively. A good capacitance-voltage (C–V) hysteresis curve is obtained in the metal oxide semiconductor (MOS) structure of the SrBi2Ta2O9 film on SiO2/Si at T
s of 500°C.
Title: Preferentially (105)-Oriented SrBi2Ta2O9 Films Prepared by Laser Ablation Method
Description:
SrBi2Ta2O9 thin films are prepared on both Pt sheet and Si wafer by the laser ablation method using an ArF excimer laser below 500°C.
Crystallographic properties of the film are characterized with substrate temperature (T
s) and O2 gas pressure as parameters.
SrBi2Ta2O9 thin films are oriented preferentially to (105) on both Pt sheet and Si wafer.
X-ray photoelectron spectra (XPS) depth profile reveals a homogeneous composition and XPS signals of Bi suggest oxygen deficiency of the film on the Si wafer.
The films deposited on Pt and Si consist of spherical grains of about 250 and 200 nm diameter, respectively.
A good capacitance-voltage (C–V) hysteresis curve is obtained in the metal oxide semiconductor (MOS) structure of the SrBi2Ta2O9 film on SiO2/Si at T
s of 500°C.
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