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Metal complex as p-type dopant-based organic spiro-OMeTAD hole-transporting material for free-Li-TFSI perovskite solar cells

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Lithium bis(fluorosulfonyl)imide (Li-TFSI) is an efficient p-dopant that has been used to enhance the conductivity of perovskite solar cells (PSCs). However, the performance of the corresponding devices is still not satisfactory due to the impact of Li-TFSI on the fill factor and the short-circuit current density of these PSCs. Herein, a new Mn complex [(Mn(Me-tpen)(ClO4)2−)]2+ was introduced as a p-type dopant into spiro-OMeTAD and was successfully applied as a hole transport material (HTM) for PSCs. Analytical studies used for device characterization included scanning electron microscopy, UV–Vis spectroscopy, current–voltage (IV) characteristics, incident photon to current efficiency, power conversion efficiency (PCE), and electrochemical impedance spectroscopy. The UV–Vis spectra displayed oxidation in the HTM by the addition of a dopant. Moreover, the movement of electrons from the higher orbital of the spiro-OMeTAD to the dopant stimulates the generation of the hole carriers in the HTM, enhancing its conductivity with outstanding long-term stability under mild conditions in a humid (RH ∼ 30%) environment. The incorporation of the Mn complex into the composite improved the material’s properties and the stability of the fabricated devices. The Mn complex as a p-type dopant for spiro-OMeTAD exhibits a perceptible PCE of 16.39% with an enhanced conductivity of 98.13%. This finding may pave a rational way for developing efficient and stable PSCs in real environments.
Title: Metal complex as p-type dopant-based organic spiro-OMeTAD hole-transporting material for free-Li-TFSI perovskite solar cells
Description:
Lithium bis(fluorosulfonyl)imide (Li-TFSI) is an efficient p-dopant that has been used to enhance the conductivity of perovskite solar cells (PSCs).
However, the performance of the corresponding devices is still not satisfactory due to the impact of Li-TFSI on the fill factor and the short-circuit current density of these PSCs.
Herein, a new Mn complex [(Mn(Me-tpen)(ClO4)2−)]2+ was introduced as a p-type dopant into spiro-OMeTAD and was successfully applied as a hole transport material (HTM) for PSCs.
Analytical studies used for device characterization included scanning electron microscopy, UV–Vis spectroscopy, current–voltage (IV) characteristics, incident photon to current efficiency, power conversion efficiency (PCE), and electrochemical impedance spectroscopy.
The UV–Vis spectra displayed oxidation in the HTM by the addition of a dopant.
Moreover, the movement of electrons from the higher orbital of the spiro-OMeTAD to the dopant stimulates the generation of the hole carriers in the HTM, enhancing its conductivity with outstanding long-term stability under mild conditions in a humid (RH ∼ 30%) environment.
The incorporation of the Mn complex into the composite improved the material’s properties and the stability of the fabricated devices.
The Mn complex as a p-type dopant for spiro-OMeTAD exhibits a perceptible PCE of 16.
39% with an enhanced conductivity of 98.
13%.
This finding may pave a rational way for developing efficient and stable PSCs in real environments.

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