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Atomic-Layer Epitaxy of Silicon on (100) Surface
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Atomic-layer epitaxy (ALE) of Si on the (100) surface has been studied. The ALE temperature window for the (100) surface was as wide as that for the (111) surface, under optimum hydrogen pressure conditions. The grown film surface was smooth only within the upper half of the window. Surface roughness increased with ALE execution cycle, due to the combined dynamic effects of excess growth, etching and surface migration of adsorbates within an execution cycle, but took an extremely small value under a special set of ALE parameters.
Title: Atomic-Layer Epitaxy of Silicon on (100) Surface
Description:
Atomic-layer epitaxy (ALE) of Si on the (100) surface has been studied.
The ALE temperature window for the (100) surface was as wide as that for the (111) surface, under optimum hydrogen pressure conditions.
The grown film surface was smooth only within the upper half of the window.
Surface roughness increased with ALE execution cycle, due to the combined dynamic effects of excess growth, etching and surface migration of adsorbates within an execution cycle, but took an extremely small value under a special set of ALE parameters.
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