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Observation of a two-dimensional electron gas in modulation-doped ZnTe/CdSe quantum wells
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We demonstrate the formation of a two-dimensional electron gas in lattice-matched, modulation-doped ZnTe/CdSe quantum well structures. Despite the well-known difficulty in n doping the II–VI semiconductor ZnTe, we find that the unusual type-II band alignment between ZnTe and CdSe allows the efficient transfer of free carriers from n-ZnTe into a CdSe quantum well since the deep donor levels in the n-ZnTe barrier lie above the confined ground state in the CdSe well. The sizeable well depth (∼1.35 eV) enables the fabrication of two-dimensional electron gases with sheet concentrations up to ∼6×1012 cm−2, and with a low-temperature mobility up to 1.4×104 cm2/V s.
Title: Observation of a two-dimensional electron gas in modulation-doped ZnTe/CdSe quantum wells
Description:
We demonstrate the formation of a two-dimensional electron gas in lattice-matched, modulation-doped ZnTe/CdSe quantum well structures.
Despite the well-known difficulty in n doping the II–VI semiconductor ZnTe, we find that the unusual type-II band alignment between ZnTe and CdSe allows the efficient transfer of free carriers from n-ZnTe into a CdSe quantum well since the deep donor levels in the n-ZnTe barrier lie above the confined ground state in the CdSe well.
The sizeable well depth (∼1.
35 eV) enables the fabrication of two-dimensional electron gases with sheet concentrations up to ∼6×1012 cm−2, and with a low-temperature mobility up to 1.
4×104 cm2/V s.
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