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Effects of sputtering power Schottky metal layers on rectifying performance of Mo–SiC Schottky contacts
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Abstract
In this study, Schottky barrier diodes based on silicon carbide with various levels of Schottky metal layer input power were prepared and characterized. In this structure, molybdenum and aluminum were employed as the Schottky metal and top electrode, respectively. Schottky metal layers were deposited with input power ranging from 30 to 210 W. Schottky metal layers and top electrodes were deposited with a thickness of 3000 Å. The Schottky barrier heights, series resistances, and ideality factor were calculated from current–voltage (I–V) curves obtained using the Cheung–Cheung and Norde methods. All deposition processes were conducted using a facing targets sputtering system. Turn on voltage was minimized when the input power was 90 W, at which point electrical characteristics were observed to have properties superior to those at other levels of input power.
Title: Effects of sputtering power Schottky metal layers on rectifying performance of Mo–SiC Schottky contacts
Description:
Abstract
In this study, Schottky barrier diodes based on silicon carbide with various levels of Schottky metal layer input power were prepared and characterized.
In this structure, molybdenum and aluminum were employed as the Schottky metal and top electrode, respectively.
Schottky metal layers were deposited with input power ranging from 30 to 210 W.
Schottky metal layers and top electrodes were deposited with a thickness of 3000 Å.
The Schottky barrier heights, series resistances, and ideality factor were calculated from current–voltage (I–V) curves obtained using the Cheung–Cheung and Norde methods.
All deposition processes were conducted using a facing targets sputtering system.
Turn on voltage was minimized when the input power was 90 W, at which point electrical characteristics were observed to have properties superior to those at other levels of input power.
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