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Conductance through Laterally Coupled Quantum Dots
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We fabricated laterally coupled quantum dots on a GaAs/
Al0.3Ga0.7As single quantum well, and studied their
transport properties. We focused on the geometrical dependence
of the conductance through laterally coupled quantum dots. The
quantum-dot-array pattern was defined by electron beam lithography and
deeply etched through the GaAs quantum well layer. We measured the
I–V characteristics of two different types of samples, which
consisted of ten quantum dots in straight and zigzag forms. For
the straight coupled quantum dots, we observed a single peak in the
conductance at zero applied bias. On the other hand, for the zigzag
coupled quantum dots, we observed double peaks in the conductance at
finite applied biases. The difference in I–V characteristics
is associated with a collimated electron beam entering into the
quantum dots.
Title: Conductance through Laterally Coupled Quantum Dots
Description:
We fabricated laterally coupled quantum dots on a GaAs/
Al0.
3Ga0.
7As single quantum well, and studied their
transport properties.
We focused on the geometrical dependence
of the conductance through laterally coupled quantum dots.
The
quantum-dot-array pattern was defined by electron beam lithography and
deeply etched through the GaAs quantum well layer.
We measured the
I–V characteristics of two different types of samples, which
consisted of ten quantum dots in straight and zigzag forms.
For
the straight coupled quantum dots, we observed a single peak in the
conductance at zero applied bias.
On the other hand, for the zigzag
coupled quantum dots, we observed double peaks in the conductance at
finite applied biases.
The difference in I–V characteristics
is associated with a collimated electron beam entering into the
quantum dots.
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