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Microcrystalline Silicon Films Deposited by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Using Helium Gas

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We have investigated the growth of microcrystalline silicon films by electron cyclotron resonance plasma chemical vapor deposition (ECR-PCVD) using He as the ECR gas at substrate temperatures in the range of 180 to 550°C with He to silane ratios (He/SiH4) of 1, 4, and 9. With ratios of 4 and 9, the volume fractions of microcrystalline silicon increase with temperature and exceed 90% at 550°C. To study the role of He plasma, we prepared silicon films using a layer-by-layer technique and found that long exposure to He plasma changes the structure of amorphous silicon to microcrystalline.
Title: Microcrystalline Silicon Films Deposited by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Using Helium Gas
Description:
We have investigated the growth of microcrystalline silicon films by electron cyclotron resonance plasma chemical vapor deposition (ECR-PCVD) using He as the ECR gas at substrate temperatures in the range of 180 to 550°C with He to silane ratios (He/SiH4) of 1, 4, and 9.
With ratios of 4 and 9, the volume fractions of microcrystalline silicon increase with temperature and exceed 90% at 550°C.
To study the role of He plasma, we prepared silicon films using a layer-by-layer technique and found that long exposure to He plasma changes the structure of amorphous silicon to microcrystalline.

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