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Bismuth Titanate Thin Films on Si with Buffer Layers Prepared by Laser Ablation and Their Electrical Properties
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Bismuth titanate thin films are grown on SiO2 /Si and Pt substrates at temperatures of 300–500°C by the laser ablation method, and their structural and electrical properties investigated. The films prepared on Si substrates with a Pt or Bi2Ti2O7(BTO) buffer layer have c-axis and (117) orientations, although the films on Pt and SiO2/Si substrates orient preferentially along the c-axis and (117) direction, respectively. Capacitance-voltage hysteresis loops of bismuth titanate thin films on SiO2/Si and BTO/Si are observed corresponding to ferroelectric hysteresis of the film. Current-voltage characteristics of bismuth titanate films on Pt and BTO/Si substrates show low leakage current.
Title: Bismuth Titanate Thin Films on Si with Buffer Layers Prepared by Laser Ablation and Their Electrical Properties
Description:
Bismuth titanate thin films are grown on SiO2 /Si and Pt substrates at temperatures of 300–500°C by the laser ablation method, and their structural and electrical properties investigated.
The films prepared on Si substrates with a Pt or Bi2Ti2O7(BTO) buffer layer have c-axis and (117) orientations, although the films on Pt and SiO2/Si substrates orient preferentially along the c-axis and (117) direction, respectively.
Capacitance-voltage hysteresis loops of bismuth titanate thin films on SiO2/Si and BTO/Si are observed corresponding to ferroelectric hysteresis of the film.
Current-voltage characteristics of bismuth titanate films on Pt and BTO/Si substrates show low leakage current.
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