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Gate-Oxide-Integrity Characteristics of Vacancy-rich Wafer Compared with Crystal-Originated-Pits-free Wafer as a Function of Oxide Thickness
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The dielectric breakdown of oxides with various thickness between 5–70 nm on Czochralski (CZ)-grown silicon wafer had been investigated. To observe the effects of crystal-originated-particle (COP), vacancy-rich wafers and COP-free wafers were compared. In breakdown voltage (BV) measurement, breakdown fractions of vacancy-rich wafers were increased with the increase of oxide thickness (t
OX) and showed a maximum value at the t
OX range of 10–20 nm. On the other hand, COP-free wafers showed few breakdowns over all the range of t
OX. Furthermore, time dependent dielectric breakdown (TDDB) of the vacancy-rich wafers showed higher extrinsic breakdowns than that of the COP-free wafers in the t
OX below 20 nm. For the intrinsic breakdown, two groups showed the same charge-to-breakdown (Q
BD) along the strength of injection current over all the range of t
OX. Especially, only in case of vacancy-rich wafer, abnormal increase of current, i.e., hump phenomena, was observed in the range of electric field below the Fowler-Nordheim (F-N) tunneling.
Title: Gate-Oxide-Integrity Characteristics of Vacancy-rich Wafer Compared with Crystal-Originated-Pits-free Wafer as a Function of Oxide Thickness
Description:
The dielectric breakdown of oxides with various thickness between 5–70 nm on Czochralski (CZ)-grown silicon wafer had been investigated.
To observe the effects of crystal-originated-particle (COP), vacancy-rich wafers and COP-free wafers were compared.
In breakdown voltage (BV) measurement, breakdown fractions of vacancy-rich wafers were increased with the increase of oxide thickness (t
OX) and showed a maximum value at the t
OX range of 10–20 nm.
On the other hand, COP-free wafers showed few breakdowns over all the range of t
OX.
Furthermore, time dependent dielectric breakdown (TDDB) of the vacancy-rich wafers showed higher extrinsic breakdowns than that of the COP-free wafers in the t
OX below 20 nm.
For the intrinsic breakdown, two groups showed the same charge-to-breakdown (Q
BD) along the strength of injection current over all the range of t
OX.
Especially, only in case of vacancy-rich wafer, abnormal increase of current, i.
e.
, hump phenomena, was observed in the range of electric field below the Fowler-Nordheim (F-N) tunneling.
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