High-quality single crystal growth of LaBi with astronomically low Dingle temperature

High-quality single crystals of the rare-earth monopnictide LaBi were grown using an optimized indium flux method, and their structural, magnetic, and transport properties were systematically investigated. X-ray diffraction and Laue measurements confirm the excellent crystallinity and well-defined orientation of the as-grown samples. Magnetization measurements reveal pronounced de Haas–van Alphen oscillations emerging from magnetic fields as low as ~1 T at low temperatures, reflecting low carrier scattering and high sample purity. Analysis of the quantum oscillations using the Lifshitz–Kosevich formalism yields extremely low Dingle temperatures of approximately 1.3 K, along with small cyclotron effective masses (0.2 m0 and 0.14 m0 from the electron and hole pockets, respectively). The extracted Berry phases are close to π, consistent with Dirac-like charge carriers in LaBi. Electrical transport measurements show metallic behavior with an exceptionally high residual resistivity ratio of ~751 (down to the measurable temperature, 17 K), further evidencing the superior quality of the single crystals. First-principles calculations performed within the DFT+U framework provide an improved description of the Fermi surface topology and reproduce the experimentally observed quantum oscillation frequencies with good agreement. The present results demonstrate that careful control of growth and annealing conditions enables the realization of defect-minimized LaBi single crystals, providing a reliable platform for detailed investigations of quantum oscillation phenomena and the electronic structure of topological semimetals.