Javascript must be enabled to continue!
Gate Engineered Ferroelectric Junctionless BioFET for Label-Free Detection of Biomolecules
View through CrossRef
Abstract
A Gate Engineered Ferroelectric Junctionless BioFET is proposed and investigated for label-free detection of various biomolecules. A nanocavity is created by etching a part of the gate oxide material on the top and bottom of the device, which allows biomolecules to get immobilized. The immobilization of biomolecules in the cavity causes changes in electrostatic characteristics such as surface potential, input and output characteristics, transconductance, output conductance, gate capacitance, and cut-off frequency used as sensing metrics. The biosensor is also examined at different biomolecule concentrations, such as -1e12, 0, and 1e12. The transistor's sensitivity is then understood by looking at the fluctuation in threshold voltage, subthreshold swing, and switching ratio. Ferroelectric Junctionless BioFET and Gate Engineered Ferroelectric Junctionless BioFET performances have been compared. It has been found that the Gate Engineered Ferroelectric Junctionless BioFET shows the maximum improvement for protein (1202.4%, 111%, and 565%) and DNA (787.5%, 117.3%, and 600%). For ultrasensitive bio-sensing applications, the Gate Engineered Ferroelectric Junctionless BioFET is shown to be suitable.
Title: Gate Engineered Ferroelectric Junctionless BioFET for Label-Free Detection of Biomolecules
Description:
Abstract
A Gate Engineered Ferroelectric Junctionless BioFET is proposed and investigated for label-free detection of various biomolecules.
A nanocavity is created by etching a part of the gate oxide material on the top and bottom of the device, which allows biomolecules to get immobilized.
The immobilization of biomolecules in the cavity causes changes in electrostatic characteristics such as surface potential, input and output characteristics, transconductance, output conductance, gate capacitance, and cut-off frequency used as sensing metrics.
The biosensor is also examined at different biomolecule concentrations, such as -1e12, 0, and 1e12.
The transistor's sensitivity is then understood by looking at the fluctuation in threshold voltage, subthreshold swing, and switching ratio.
Ferroelectric Junctionless BioFET and Gate Engineered Ferroelectric Junctionless BioFET performances have been compared.
It has been found that the Gate Engineered Ferroelectric Junctionless BioFET shows the maximum improvement for protein (1202.
4%, 111%, and 565%) and DNA (787.
5%, 117.
3%, and 600%).
For ultrasensitive bio-sensing applications, the Gate Engineered Ferroelectric Junctionless BioFET is shown to be suitable.
Related Results
Notched Gate and Graded Gate Oxide Processing for Reduced Capacitance Application in RF MOSFETs
Notched Gate and Graded Gate Oxide Processing for Reduced Capacitance Application in RF MOSFETs
As the demands of RF applications are rising, optimization of internal MOSFETs capacitances is a key issue to improve the cut-off frequency. In this abstract we report the developm...
Relaxor Ferroelectric Oxides: Concept to Applications
Relaxor Ferroelectric Oxides: Concept to Applications
Ferroelectric ceramic is one of the most important functional materials, which has great importance in modern technologies. A ferroelectric ceramic simultaneously exhibits dielectr...
Effect of Gate-Electrode/Gate-Dielectric Interlayer on Gate Screening of Remote Phonon Scattering in InGaZnO Thin-Film Transistor with High-k Gate Dielectric
Effect of Gate-Electrode/Gate-Dielectric Interlayer on Gate Screening of Remote Phonon Scattering in InGaZnO Thin-Film Transistor with High-k Gate Dielectric
InGaZnO thin-film transistors with various SiO2 thicknesses (0, 3.5, 8.5, 18.8 nm) in double-layered gate dielectric (NdHfO/SiO2) and different gate doping concentrations (2.4×1015...
Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors
Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors
In this work, we investigated the degradation of the p-GaN gate stack induced by the forward gate voltage stress in normally off AlGaN/GaN high electron mobility transistors (HEMTs...
Ferroelectric Ceramic Materials Prepared by Nanoparticles in Outdoor Environmental Sculpture Art
Ferroelectric Ceramic Materials Prepared by Nanoparticles in Outdoor Environmental Sculpture Art
With the development and progress of the city, people’s research on outdoor sculpture has gone deeper, and the field of material research has been raised to the field of spiritual ...
Study of ferroelectric switching and fatigue behaviors in poly(vinylidene fluoride-trifluoroethylene) copolymer nano-films
Study of ferroelectric switching and fatigue behaviors in poly(vinylidene fluoride-trifluoroethylene) copolymer nano-films
The nano-films of poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer, with mole ratio of VDFTrFE 70/30, are deposited on titanium-metallized silicon wafer by spin...
Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors
Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors
In this paper, we investigate the effect of lateral gate design on performance of a p-type double lateral gate junctionless transistors (DGJLTs) with an air gate gap. The impact of...
Hubungan Pengetahuan terkait Label Gizi dengan Kebiasaan Membaca Label Gizi pada Siswa SMA Al-Islam
Hubungan Pengetahuan terkait Label Gizi dengan Kebiasaan Membaca Label Gizi pada Siswa SMA Al-Islam
Latar Belakang: Masih sedikit konsumen yang dapat memahami dan menggunakan label gizi sesuai dengan fungsinya. Hal ini dikarenakan masih rendahnya kesadaran masyarakat terkait pent...

