Search engine for discovering works of Art, research articles, and books related to Art and Culture
ShareThis
Javascript must be enabled to continue!

Recrystallization in severely deformed Ag, Au, and Fe studied by positron‐annihilation and XRD methods

View through CrossRef
Positron‐annihilation studies of severely deformed samples of pure Ag, Au, and Fe are reported. The observed changes of the positron‐annihilation parameters during isochronal annealing are linked to the recrystallization process confirmed by measurements of the XRD patterns and pole figures. The latter, being sensitive to the crystallographic texture, change significantly during the recrystallization process for all three metals. The measured annihilation line‐shape parameter dependencies are described by a model that takes into account the boundary migration of the new defect‐free grains and positron diffusion inside these grains. The model fairly well describes the observed dependencies and allows us to determine the activation energy for grain‐boundary migration. The usefulness of the positron‐annihilation studies for determination of the recrystallization temperature in deformed metals and alloys is discussed.
Title: Recrystallization in severely deformed Ag, Au, and Fe studied by positron‐annihilation and XRD methods
Description:
Positron‐annihilation studies of severely deformed samples of pure Ag, Au, and Fe are reported.
The observed changes of the positron‐annihilation parameters during isochronal annealing are linked to the recrystallization process confirmed by measurements of the XRD patterns and pole figures.
The latter, being sensitive to the crystallographic texture, change significantly during the recrystallization process for all three metals.
The measured annihilation line‐shape parameter dependencies are described by a model that takes into account the boundary migration of the new defect‐free grains and positron diffusion inside these grains.
The model fairly well describes the observed dependencies and allows us to determine the activation energy for grain‐boundary migration.
The usefulness of the positron‐annihilation studies for determination of the recrystallization temperature in deformed metals and alloys is discussed.

Related Results

Advances in applications of positron annihilation spectroscopy to investigating semiconductor microstructures
Advances in applications of positron annihilation spectroscopy to investigating semiconductor microstructures
Positron annihilation spectroscopy has unique advantage for detecting the micro-defects and microstructures in materials,especially for investigating the negatively charged defects...
Anylasis and comparison of several methods for calculation of positron bulk lifetime in perfect crystals
Anylasis and comparison of several methods for calculation of positron bulk lifetime in perfect crystals
Positron annihilation lifetime spectroscopy, which takes positron lifetime as a detected object, has been widely applied to the study on micro-defects of semiconductors and other m...
Positron Annihilation Studies of Materials
Positron Annihilation Studies of Materials
Abstract This chapter gives a concise overview of the probe techniques of positron annihilation and their use for studying the electronic structure and open volume defect...
Positron Annihilation Studies of Materials
Positron Annihilation Studies of Materials
AbstractPositron annihilation provides sensitive and versatile probe techniques in materials science that can characterize electronic structure and vacancy‐type, open volume, defec...
Orientation-dependent recrystallization and extreme ductility in a sheared quartz vein
Orientation-dependent recrystallization and extreme ductility in a sheared quartz vein
Microstructures in quartz are widely used to draw inferences on conditions and history of deformation. In particular quartz recrystallization microstructures are often assumed to p...
Study of Si–Ge Interdiffusion in Laser Recrystallization of Ge Epitaxial Film on Si Substrate
Study of Si–Ge Interdiffusion in Laser Recrystallization of Ge Epitaxial Film on Si Substrate
Direct epitaxial growth of germanium (Ge) film on silicon (Si) substrate (GOSS) holds great potential in micro-electronics and optoelectronics. However, due to the 4.2% lattice mis...
The Interfacial Reactions in Ti/Si and Ni/Si Systems Observed by a Monoenergetic Positron Beam
The Interfacial Reactions in Ti/Si and Ni/Si Systems Observed by a Monoenergetic Positron Beam
ABSTRACTThe formation of suicides via the thin-film deposition of transition metals onto Si substrates has been investigated by a monoenergetic positron beam. The Doppler broadened...
Fast High-resolution Lifetime Image Reconstruction for Positron Lifetime Tomography
Fast High-resolution Lifetime Image Reconstruction for Positron Lifetime Tomography
Abstract The life history of a positron before annihilation has long been overlooked by current positron emission tomography (PET) techniques. Due to the ortho-positronium ...

Back to Top