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Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
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Heavily Sn-doped InGaP layers were grown on GaAs substrates by atmospheric-pressure metalorganic chemical vapor deposition, using trimethylindium (TMIn), trimethylgallium (TMGa) and tertiarybutylphosphine (TBP) as source gases and tetraethyltin (TESn) as an n-type dopant gas. The doping properties of n-type InGaP epitaxial layers were studied using C-V measurements, Hall effect measurements and secondary ion mass spectrometry (SIMS). The carrier concentration can be controlled reproducibly in the range of 1018 to 1019 cm-3 and the maximum carrier concentration of 1.3 ×1019 cm-3 was achieved. The Sn donors incorporated in the InGaP layers are sufficiently activated.
Title: Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
Description:
Heavily Sn-doped InGaP layers were grown on GaAs substrates by atmospheric-pressure metalorganic chemical vapor deposition, using trimethylindium (TMIn), trimethylgallium (TMGa) and tertiarybutylphosphine (TBP) as source gases and tetraethyltin (TESn) as an n-type dopant gas.
The doping properties of n-type InGaP epitaxial layers were studied using C-V measurements, Hall effect measurements and secondary ion mass spectrometry (SIMS).
The carrier concentration can be controlled reproducibly in the range of 1018 to 1019 cm-3 and the maximum carrier concentration of 1.
3 ×1019 cm-3 was achieved.
The Sn donors incorporated in the InGaP layers are sufficiently activated.
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