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EXTRACTION OF POLARIZATION-INDUCED CHARGE DENSITY INMODULATION-DOPED AlxGa1-xN/GaN HETEROSTRUCTURETHROUGH THE SIMULATION OF THE SCHOTTKY CAPACITANCE-VOLTAGE CHARACTERISTICS
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Polarization-induced charge density in modulation-doped AlxGa1-xN/GaN heterostructures is extracted through the simulation of the Schottky Capacitance-Voltage (C-V) characteristics. C-V measurements were made on Pt Schottky contacts on modulation-doped Al0.22Ga0.78N/GaN heterostructures. The C-V characteristics were simulated numerically using the three-dimensional Fermi model.Influence of sample parameters on C-V characteristics is analized by the simulation.Polarization-induced charge density,n-AlGaN doping level and Schottky barrier height have different influences on the C-V characteristics,and thus the polarization-induced charge density can be extracted accurately.The polarization-induced sheet charge density at the heterointerface is extracted to be 6.78×1012cm-2 in the Al0.22Ga0.78N/GaN heterostructure with the Al0.22Ga0.78 N thickness of 45nm.This work provides a method for quantitative analysis of the polarization-indeced charge in modulation-doped AlxGa1-xN/GaN heterostructures.
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Title: EXTRACTION OF POLARIZATION-INDUCED CHARGE DENSITY INMODULATION-DOPED AlxGa1-xN/GaN HETEROSTRUCTURETHROUGH THE SIMULATION OF THE SCHOTTKY CAPACITANCE-VOLTAGE CHARACTERISTICS
Description:
Polarization-induced charge density in modulation-doped AlxGa1-xN/GaN heterostructures is extracted through the simulation of the Schottky Capacitance-Voltage (C-V) characteristics.
C-V measurements were made on Pt Schottky contacts on modulation-doped Al0.
22Ga0.
78N/GaN heterostructures.
The C-V characteristics were simulated numerically using the three-dimensional Fermi model.
Influence of sample parameters on C-V characteristics is analized by the simulation.
Polarization-induced charge density,n-AlGaN doping level and Schottky barrier height have different influences on the C-V characteristics,and thus the polarization-induced charge density can be extracted accurately.
The polarization-induced sheet charge density at the heterointerface is extracted to be 6.
78×1012cm-2 in the Al0.
22Ga0.
78N/GaN heterostructure with the Al0.
22Ga0.
78 N thickness of 45nm.
This work provides a method for quantitative analysis of the polarization-indeced charge in modulation-doped AlxGa1-xN/GaN heterostructures.
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