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Simple modeling of a novel three-terminal Nanoscale memristor
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Nanoscale memristors open up new opportunities for the development of
brain neural networks. Simple and precise memristors enhance the
performance of various neural networks and operational circuits. In this
letter, a three-terminal memristor is proposed, which makes the
memristor more flexible and practical in circuit design and application
through the introduction of a control port. Consid-ering that the
resistance of a three-terminal memristor consists of three parts, i.e.,
metal region, low-resistance region, and high-resistance region, a
three-segment piecewiselinear method is applied to fit these three
regions. The model of this memristor is constructed through the
derivation of the memristor formula and working principle.Candence
simulations are conducted on the resultant circuit to verify its
correctness.
Title: Simple modeling of a novel three-terminal Nanoscale memristor
Description:
Nanoscale memristors open up new opportunities for the development of
brain neural networks.
Simple and precise memristors enhance the
performance of various neural networks and operational circuits.
In this
letter, a three-terminal memristor is proposed, which makes the
memristor more flexible and practical in circuit design and application
through the introduction of a control port.
Consid-ering that the
resistance of a three-terminal memristor consists of three parts, i.
e.
,
metal region, low-resistance region, and high-resistance region, a
three-segment piecewiselinear method is applied to fit these three
regions.
The model of this memristor is constructed through the
derivation of the memristor formula and working principle.
Candence
simulations are conducted on the resultant circuit to verify its
correctness.
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