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Fabrication of Piezoelectric Al0.3Ga0.7As Heterostructures
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A new process has been developed for the fabrication of AlGaAs-based MEMS which the inherent piezoelectric transduction present in this material to be used for sensing and actuation. The process combines molecular beam epitaxial growth of single-crystal Al0.3Ga0.7As multilayer, inductively coupled plasma reactive-ion etching (ICP-RIE), and highly selective wet etching of GaAs to produce released Al0.3Ga0.7As structures. The process has been validated through the fabrication of both cantilever and doubly clamped beam structures, and has wider use for applications where large electromechanical coupling strength and single-crystal heterostructure are desired.
Title: Fabrication of Piezoelectric Al0.3Ga0.7As Heterostructures
Description:
A new process has been developed for the fabrication of AlGaAs-based MEMS which the inherent piezoelectric transduction present in this material to be used for sensing and actuation.
The process combines molecular beam epitaxial growth of single-crystal Al0.
3Ga0.
7As multilayer, inductively coupled plasma reactive-ion etching (ICP-RIE), and highly selective wet etching of GaAs to produce released Al0.
3Ga0.
7As structures.
The process has been validated through the fabrication of both cantilever and doubly clamped beam structures, and has wider use for applications where large electromechanical coupling strength and single-crystal heterostructure are desired.
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