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Formation of β-FeSi2Layers on Si(001) Substrates
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The crystal quality of β-FeSi2formed on Si(001) by both the thermal reaction method and reactive deposition epitaxy (RDE) was investigated under various growth conditions. Compared with the thermal reaction method, the crystal quality of β-FeSi2formed by RDE was improved. In the RDE method, the Fe deposition rate as well as the growth temperature influenced the crystal quality of β-FeSi2. Among various growth temperatures and deposition rates of Fe, highly (100)-oriented epitaxial β-FeSi2was formed by RDE at 470°C and 0.1 Å/s, respectively. Measurements of the absorption coefficient at room temperature (RT) indicate that β-FeSi2has a direct band gap of about 0.83 eV.
Title: Formation of β-FeSi2Layers on Si(001) Substrates
Description:
The crystal quality of β-FeSi2formed on Si(001) by both the thermal reaction method and reactive deposition epitaxy (RDE) was investigated under various growth conditions.
Compared with the thermal reaction method, the crystal quality of β-FeSi2formed by RDE was improved.
In the RDE method, the Fe deposition rate as well as the growth temperature influenced the crystal quality of β-FeSi2.
Among various growth temperatures and deposition rates of Fe, highly (100)-oriented epitaxial β-FeSi2was formed by RDE at 470°C and 0.
1 Å/s, respectively.
Measurements of the absorption coefficient at room temperature (RT) indicate that β-FeSi2has a direct band gap of about 0.
83 eV.
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