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Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs
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This paper describes the influence of the geometric component in the charge-pumping
measurement of 4H-SiC MOSFETs. Charge-pumping measurements were conducted on 4H-SiC
MOSFETs with and without NO annealing. Charge-pumping measurements with different pulse-fall
times revealed that the geometric component exists in 4H-SiC MOSFETs and is especially large in
the unannealed MOSFETs. A sufficiently long fall-time is needed to minimize its effect, which is
expected to be 1–10 μs for 4H-SiC MOSFETs with a gate length of 10 μm.
Trans Tech Publications, Ltd.
Title: Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs
Description:
This paper describes the influence of the geometric component in the charge-pumping
measurement of 4H-SiC MOSFETs.
Charge-pumping measurements were conducted on 4H-SiC
MOSFETs with and without NO annealing.
Charge-pumping measurements with different pulse-fall
times revealed that the geometric component exists in 4H-SiC MOSFETs and is especially large in
the unannealed MOSFETs.
A sufficiently long fall-time is needed to minimize its effect, which is
expected to be 1–10 μs for 4H-SiC MOSFETs with a gate length of 10 μm.
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