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Fabrication of Josephson junctions using heteroepitaxial Bi2(Sr,Ca)3Cu2Ox/Bi2Sr2CuOy/Bi2(Sr,Ca)3Cu2Ox trilayer films
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We have fabricated Josephson junctions from c-axis oriented heteroepitaxial Bi2(Sr,Ca)3Cu2Ox/Bi2Sr2CuOy/Bi2(Sr,Ca)3Cu2Ox trilayer films. The junctions showed resistively shunted junctionlike characteristics up to 30 K. Several junctions showed hysteresis at low temperatures. The highest value of the product of the critical current and the normal state resistance of the junctions was about 0.2 mV. Clear Shapiro steps at the expected voltages were observed in the presence of external microwave irradiation. The height of these steps oscillated to full suppression as a function of the microwave source power. Moreover the periodic magnetic field dependence of the critical current was clearly observed. These results indicated a good uniformity in the Josephson current distribution in these junctions.
Title: Fabrication of Josephson junctions using heteroepitaxial Bi2(Sr,Ca)3Cu2Ox/Bi2Sr2CuOy/Bi2(Sr,Ca)3Cu2Ox trilayer films
Description:
We have fabricated Josephson junctions from c-axis oriented heteroepitaxial Bi2(Sr,Ca)3Cu2Ox/Bi2Sr2CuOy/Bi2(Sr,Ca)3Cu2Ox trilayer films.
The junctions showed resistively shunted junctionlike characteristics up to 30 K.
Several junctions showed hysteresis at low temperatures.
The highest value of the product of the critical current and the normal state resistance of the junctions was about 0.
2 mV.
Clear Shapiro steps at the expected voltages were observed in the presence of external microwave irradiation.
The height of these steps oscillated to full suppression as a function of the microwave source power.
Moreover the periodic magnetic field dependence of the critical current was clearly observed.
These results indicated a good uniformity in the Josephson current distribution in these junctions.
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