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Fabrication of Micro-Marks for Electron-Beam Lithography
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We have developed micro-marks to be used for precise adjustment of the electron optics in electron-beam writers. The micro-marks fabricated are the dot-mark of W on a Si substrate, the hole-mark on a W layer, and the hole-mark on a Au layer. With these marks, it is possible to precisely measure the edge resolution as well as the two-dimensional shape and size in the variably shaped beam (VSB) and the character projection (CP) lithography. Measuring the edge resolution of shaped beam in 50 keV electron-beam writer with these marks, we found that the hole-mark on a W layer gave the best resolution and contrast. These results show that these marks are applicable to lithography of 0.15 µm or below.
IOP Publishing
Jun Takamatsu Jun Takamatsu
Tetsuro Nakasugi Tetsuro Nakasugi
Yoshimitsu Kato Yoshimitsu Kato
Naoharu Shimomura Naoharu Shimomura
Hitoshi Sunaoshi Hitoshi Sunaoshi
Kiyoshi Hattori Kiyoshi Hattori
Kazuaki Nakajima Kazuaki Nakajima
Kazuyoshi Sugihara Kazuyoshi Sugihara
Tadahiro Takigawa Tadahiro Takigawa
Title: Fabrication of Micro-Marks for Electron-Beam Lithography
Description:
We have developed micro-marks to be used for precise adjustment of the electron optics in electron-beam writers.
The micro-marks fabricated are the dot-mark of W on a Si substrate, the hole-mark on a W layer, and the hole-mark on a Au layer.
With these marks, it is possible to precisely measure the edge resolution as well as the two-dimensional shape and size in the variably shaped beam (VSB) and the character projection (CP) lithography.
Measuring the edge resolution of shaped beam in 50 keV electron-beam writer with these marks, we found that the hole-mark on a W layer gave the best resolution and contrast.
These results show that these marks are applicable to lithography of 0.
15 µm or below.
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