Search engine for discovering works of Art, research articles, and books related to Art and Culture
ShareThis
Javascript must be enabled to continue!

X-Ray DCD and EPMA Measurements of Al Concentration in Epitaxial AlxGa1-xAs/GaAs Layers

View through CrossRef
AbstractDouble Crystal X-Ray Diffraction (DCD) is often used to determine the Al content of AlxGa1-xAs/GaAs epitaxial layers. Assessing composition from a measurement of mismatch is problematic because it invokes a number of assumptions. This study bypasses these difficulties by comparing the measurement of mismatch directly with Al composition measurements made by electronprobe microanalysis. A study of coherent epitaxial AlxGa1-xAs layers showed that mismatch varies linearly with composition. The equation Al (x) = |ΔΘ| / 368 summarizes the relationship over the coherent range, where |ΔΘ| is measured in arc seconds.
Title: X-Ray DCD and EPMA Measurements of Al Concentration in Epitaxial AlxGa1-xAs/GaAs Layers
Description:
AbstractDouble Crystal X-Ray Diffraction (DCD) is often used to determine the Al content of AlxGa1-xAs/GaAs epitaxial layers.
Assessing composition from a measurement of mismatch is problematic because it invokes a number of assumptions.
This study bypasses these difficulties by comparing the measurement of mismatch directly with Al composition measurements made by electronprobe microanalysis.
A study of coherent epitaxial AlxGa1-xAs layers showed that mismatch varies linearly with composition.
The equation Al (x) = |ΔΘ| / 368 summarizes the relationship over the coherent range, where |ΔΘ| is measured in arc seconds.

Related Results

Avalanche multiplication in submicron AlxGa1−xAs/GaAs multilayer structures
Avalanche multiplication in submicron AlxGa1−xAs/GaAs multilayer structures
A systematic study of the role of band edge discontinuities on ionization rates in periodic AlxGa1−xAs/GaAs structures has been performed by measuring the electron and hole multipl...
Kidney transplantation from donation after cardiac death donors: lack of impact of delayed graft function on post‐transplant outcomes
Kidney transplantation from donation after cardiac death donors: lack of impact of delayed graft function on post‐transplant outcomes
Singh RP, Farney AC, Rogers J, Zuckerman J, Reeves‐Daniel A, Hartmann E, Iskandar S, Adams P, Stratta RJ. Kidney transplantation from donation after cardiac death donors: lack of i...
First-principles investigation of ordered structures in zinc blende III–V ternary semiconductors
First-principles investigation of ordered structures in zinc blende III–V ternary semiconductors
We systematically investigate the impact of ordered configurations of group III atoms on the formation enthalpy of zinc blende III–V alloys using first-principles calculations. The...
Electron multiplication in AlxGa1−xAs/GaAs heterostructures
Electron multiplication in AlxGa1−xAs/GaAs heterostructures
We have measured the electron multiplication characteristics of thin (∼0.1 μm) AlxGa1−xAs(500 Å)/GaAs(500 Å) single heterostructures with 0.3⩽x⩽0.6, grown in a p-i-n configuration....
Metabolic Outcomes After Pancreas Transplant Alone From Donation After Circulatory Death Donors-The UK Transplant Registry Analysis
Metabolic Outcomes After Pancreas Transplant Alone From Donation After Circulatory Death Donors-The UK Transplant Registry Analysis
Extrapolating data from early DCD (donation after circulatory death) kidney transplantation, pancreas transplants from DCD grafts were feared to have worse metabolic outcomes. Henc...
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface morphologies of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy were studied using atomic force microscopy. The surface of a GaAs layer gr...

Back to Top