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Characterization of Sn-xIn Solders and Thermomigration-Induced Interfacial IMC Growth of Cu/Sn-xIn/Cu Micro Solder Joints

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The melting behavior and microstructure of bulk Sn-xIn (x = 6, 12 and 24, wt.%) solders and the thermomigration, elemental distribution and intermetallic compound (IMC) growth in Cu/Sn-xIn/Cu micro solder joints during soldering and aging under temperature gradient (TG) were investigated. The results indicate that In addition effectively decreased the melting temperature of the bulk solders. Only the InSn4 phase was detected when In addition was increased to 24 wt.%. During soldering under TG, the growth rate of the interfacial IMC layer at the cold end interfaces gradually decreased as the In content increased. The mechanism of microstructure evolution and elemental distribution in the micro solder joints was revealed based on the TG-induced atomic thermomigration (TM). The chemical potential gradient of atoms was enhanced by TM, and the rapid diffusion of atoms in the liquids resulted in a uniform distribution of In element in both solders and the IMC phase during soldering. While during aging under TG, there was a smaller chemical potential gradient due to the slow atomic diffusion rate. At this time, TG dominated the atomic migration, which resulted in a nonuniform distribution of the In element in the whole joints. This study provides further insight into the application of In-containing solders in electronic packaging.
Title: Characterization of Sn-xIn Solders and Thermomigration-Induced Interfacial IMC Growth of Cu/Sn-xIn/Cu Micro Solder Joints
Description:
The melting behavior and microstructure of bulk Sn-xIn (x = 6, 12 and 24, wt.
%) solders and the thermomigration, elemental distribution and intermetallic compound (IMC) growth in Cu/Sn-xIn/Cu micro solder joints during soldering and aging under temperature gradient (TG) were investigated.
The results indicate that In addition effectively decreased the melting temperature of the bulk solders.
Only the InSn4 phase was detected when In addition was increased to 24 wt.
%.
During soldering under TG, the growth rate of the interfacial IMC layer at the cold end interfaces gradually decreased as the In content increased.
The mechanism of microstructure evolution and elemental distribution in the micro solder joints was revealed based on the TG-induced atomic thermomigration (TM).
The chemical potential gradient of atoms was enhanced by TM, and the rapid diffusion of atoms in the liquids resulted in a uniform distribution of In element in both solders and the IMC phase during soldering.
While during aging under TG, there was a smaller chemical potential gradient due to the slow atomic diffusion rate.
At this time, TG dominated the atomic migration, which resulted in a nonuniform distribution of the In element in the whole joints.
This study provides further insight into the application of In-containing solders in electronic packaging.

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