High magnetoresistance in Bi0.91Sb0.09 single crystals doped with Te and Sn

Investigations are presented of how donor and acceptor doping influence the magnetotransport in Bi0.91Sb0.09 single crystals. Perfect and homogeneous Bi0.91Sb0.09 single crystals with Te and Sn doping from 5 × 10−5 at. % to 10−3 at. % were grown by the Czochralski technique using a solid Sb feed. High carrier mobilities of up to 8.2 × 105 cm2 V−1 s−1 at 77 K were achieved in these single crystals. In a magnetic field of 1.0 T and at temperatures of less than 150 K, undoped and doped Bi0.91Sb0.09 single crystals exhibited magnetoresistances higher than those of other materials. The influences of Te and Sn doping of Bi0.91Sb0.09 single crystals, a feature of their band structure, and the changes of the carrier effective mass, density, and mobility in magnetic field on magnetoresistances and applicability of the Abrikosov quantum theory were studied. A high linear magnetoresistance of 5800% was reached in an Sn-doped (1.5 × 10−4 at. %) single crystal in a magnetic field of 1.15 T at 90 K. The present results suggest that the studied single crystals may be promising materials for magnetic sensors and multifunctional electromagnetic devices.