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Implanted Interstitial Boron Atoms in Silicon
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Photoconductivity methods are used to investigate high-resistivity n-type and p-type silicon implanted with doses of ∼1014 B+/cm2 of 100 keV. Besides the photoconductivity band associated with the divacancy, a photoconductivity level at ∼0.4 eV is detected in the spectrum. This level anneals at ∼300°C; it has been associated with boron interstitial atoms in sites of trigonal symmetry for boron-doped silicon irradiated with electrons. The appearance of this level is not so clear in the case of the p-type silicon substrate where the substrate contribution to the photoconductivity is larger.
Title: Implanted Interstitial Boron Atoms in Silicon
Description:
Photoconductivity methods are used to investigate high-resistivity n-type and p-type silicon implanted with doses of ∼1014 B+/cm2 of 100 keV.
Besides the photoconductivity band associated with the divacancy, a photoconductivity level at ∼0.
4 eV is detected in the spectrum.
This level anneals at ∼300°C; it has been associated with boron interstitial atoms in sites of trigonal symmetry for boron-doped silicon irradiated with electrons.
The appearance of this level is not so clear in the case of the p-type silicon substrate where the substrate contribution to the photoconductivity is larger.
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