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Coulomb Interaction Effect Correction in Electron-Beam Block Exposure Lithography
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A new proximity effect correction technique for variably shaped
beam and block exposure tools capable of correcting pattern size
variations due to the Coulomb interaction effect is proposed. The
Coulomb interaction affects the forward scattering term of a
double-Gaussian energy intensity distribution. The double-Gaussian
energy intensity distribution function is modified so that the forward
scattering term has an electron-beam current dependency. The
relationship between the electron-beam current and electron-beam blur
is determined by a knife-edge electron-beam profile
measurement. Experiments show that the relationship between the
electron-beam blur and the current can be roughly approximated by a
linear function of the electron-beam current below 1.5 µA. This
relationship is applied to the double-Gaussian-based proximity effect
correction program. Successful correction is demonstrated for 0.13 µm L/S test patterns.
Title: Coulomb Interaction Effect Correction in Electron-Beam Block Exposure Lithography
Description:
A new proximity effect correction technique for variably shaped
beam and block exposure tools capable of correcting pattern size
variations due to the Coulomb interaction effect is proposed.
The
Coulomb interaction affects the forward scattering term of a
double-Gaussian energy intensity distribution.
The double-Gaussian
energy intensity distribution function is modified so that the forward
scattering term has an electron-beam current dependency.
The
relationship between the electron-beam current and electron-beam blur
is determined by a knife-edge electron-beam profile
measurement.
Experiments show that the relationship between the
electron-beam blur and the current can be roughly approximated by a
linear function of the electron-beam current below 1.
5 µA.
This
relationship is applied to the double-Gaussian-based proximity effect
correction program.
Successful correction is demonstrated for 0.
13 µm L/S test patterns.
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